JANTX2N3735 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3735 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/395
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Frequency
250MHz
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A 1.5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
60ns
Turn On Time-Max (ton)
48ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.069680
$10.06968
10
$9.499699
$94.99699
100
$8.961980
$896.198
500
$8.454698
$4227.349
1000
$7.976130
$7976.13
JANTX2N3735 Product Details
JANTX2N3735 Overview
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 900mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In extreme cases, the collector current can be as low as 1.5A volts.
JANTX2N3735 Features
the DC current gain for this device is 20 @ 1A 1.5V the vce saturation(Max) is 900mV @ 100mA, 1A the emitter base voltage is kept at 5V
JANTX2N3735 Applications
There are a lot of Microsemi Corporation JANTX2N3735 applications of single BJT transistors.