BC856BT TR PBFREE

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Manufacturer part number:BC856BT TR PBFREE

Manufacturer:Central Semiconductor Corp

Description:BC856BT TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

Case Package:SOT-23

Datasheet:BC856BT TR PBFREE Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Operating Temperature	-65°C~150°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	250mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	65V
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	100MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.44000	$0.44
500	$0.4356	$217.8
1000	$0.4312	$431.2
1500	$0.4268	$640.2
2000	$0.4224	$844.8
2500	$0.418	$1045

BC856BT TR PBFREE Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.