BC858BW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website
SOT-23
BC858BW-G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
TIN
Subcategory
Other Transistors
Max Power Dissipation
150mW
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Configuration
Single
Power - Max
150mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2.2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Max Breakdown Voltage
30V
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.523440
$5.52344
10
$5.210792
$52.10792
100
$4.915842
$491.5842
500
$4.637587
$2318.7935
1000
$4.375082
$4375.082
BC858BW-G Product Details
BC858BW-G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2.2mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.100MHz is present in the transition frequency.Breakdown input voltage is 30V volts.A maximum collector current of 100mA volts is possible.
BC858BW-G Features
the DC current gain for this device is 220 @ 2.2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA a transition frequency of 100MHz
BC858BW-G Applications
There are a lot of Comchip Technology BC858BW-G applications of single BJT transistors.