2DC4672-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
2DC4672-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
180MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DC4672
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Power - Max
900mW
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
105mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.052119
$0.052119
500
$0.038323
$19.1615
1000
$0.031935
$31.935
2000
$0.029299
$58.598
5000
$0.027383
$136.915
10000
$0.025471
$254.71
15000
$0.024634
$369.51
50000
$0.024222
$1211.1
2DC4672-13 Product Details
2DC4672-13 Overview
This device has a DC current gain of 82 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 105mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.The part has a transition frequency of 180MHz.An input voltage of 50V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2DC4672-13 Features
the DC current gain for this device is 82 @ 500mA 2V a collector emitter saturation voltage of 105mV the vce saturation(Max) is 350mV @ 50mA, 1A the emitter base voltage is kept at 7V a transition frequency of 180MHz
2DC4672-13 Applications
There are a lot of Diodes Incorporated 2DC4672-13 applications of single BJT transistors.