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NSM80100MT1G

NSM80100MT1G

NSM80100MT1G

ON Semiconductor

NSM80100MT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSM80100MT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 270mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 270mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 150MHz
Frequency - Transition 150MHz
Emitter Base Voltage (VEBO) -4V
hFE Min 120
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.081440 $0.08144
500 $0.059882 $29.941
1000 $0.049902 $49.902
2000 $0.045782 $91.564
5000 $0.042787 $213.935
10000 $0.039801 $398.01
15000 $0.038493 $577.395
50000 $0.037849 $1892.45
NSM80100MT1G Product Details

NSM80100MT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 10mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.There is a transition frequency of 150MHz in the part.A maximum collector current of 500mA volts can be achieved.

NSM80100MT1G Features


the DC current gain for this device is 120 @ 10mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
a transition frequency of 150MHz

NSM80100MT1G Applications


There are a lot of ON Semiconductor NSM80100MT1G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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