NSM80100MT1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 10mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.With the emitter base voltage set at -4V, an efficient operation can be achieved.There is a transition frequency of 150MHz in the part.A maximum collector current of 500mA volts can be achieved.

NSM80100MT1G Features

the DC current gain for this device is 120 @ 10mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
a transition frequency of 150MHz

NSM80100MT1G Applications

There are a lot of ON Semiconductor NSM80100MT1G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface