BC847BL3E6327XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC847BL3E6327XTMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e4
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Gold (Au)
Additional Feature
LOW NOISE
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XBCC-N3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
250mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
250MHz
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
30,000
$0.06883
$2.0649
BC847BL3E6327XTMA1 Product Details
BC847BL3E6327XTMA1 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.This device displays a 45V maximum voltage - Collector Emitter Breakdown.
BC847BL3E6327XTMA1 Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 250MHz
BC847BL3E6327XTMA1 Applications
There are a lot of Infineon Technologies BC847BL3E6327XTMA1 applications of single BJT transistors.