BC807-40-7-F Overview

This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at -5V for high efficiency.In this part, there is a transition frequency of 100MHz.An input voltage of 45V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as -500mA volts at Single BJT transistors maximum.

BC807-40-7-F Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

BC807-40-7-F Applications

There are a lot of Diodes Incorporated BC807-40-7-F applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting