FJP13007H1TU-F080 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.An emitter's base voltage can be kept at 9V to gain high efficiency.In the part, the transition frequency is 4MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
FJP13007H1TU-F080 Features
the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJP13007H1TU-F080 Applications
There are a lot of ON Semiconductor FJP13007H1TU-F080 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
