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FJP13007H1TU-F080

FJP13007H1TU-F080

FJP13007H1TU-F080

ON Semiconductor

FJP13007H1TU-F080 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP13007H1TU-F080 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
Transition Frequency 4MHz
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 700V
Power Dissipation-Max (Abs) 80W
Emitter Base Voltage (VEBO) 9V
hFE Min 5
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.492916 $0.492916
10 $0.465015 $4.65015
100 $0.438693 $43.8693
500 $0.413862 $206.931
1000 $0.390435 $390.435
FJP13007H1TU-F080 Product Details

FJP13007H1TU-F080 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.An emitter's base voltage can be kept at 9V to gain high efficiency.In the part, the transition frequency is 4MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

FJP13007H1TU-F080 Features


the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

FJP13007H1TU-F080 Applications


There are a lot of ON Semiconductor FJP13007H1TU-F080 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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