DXT13003DG-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT13003DG-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
700mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1.3A
DC Current Gain (hFE) (Min) @ Ic, Vce
16 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic
400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage
450V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
400mV
Max Breakdown Voltage
450V
Emitter Base Voltage (VEBO)
9V
Continuous Collector Current
1.3A
Turn On Time-Max (ton)
3700ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.272040
$0.27204
10
$0.256642
$2.56642
100
$0.242115
$24.2115
500
$0.228410
$114.205
1000
$0.215481
$215.481
DXT13003DG-13 Product Details
DXT13003DG-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 500mA 2V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A 1.3A continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 4MHz.The breakdown input voltage is 450V volts.When collector current reaches its maximum, it can reach 1.3A volts.
DXT13003DG-13 Features
the DC current gain for this device is 16 @ 500mA 2V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 400mV @ 250mA, 1A the emitter base voltage is kept at 9V a transition frequency of 4MHz
DXT13003DG-13 Applications
There are a lot of Diodes Incorporated DXT13003DG-13 applications of single BJT transistors.