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DXT13003DG-13

DXT13003DG-13

DXT13003DG-13

Diodes Incorporated

DXT13003DG-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT13003DG-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 700mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1.3A
DC Current Gain (hFE) (Min) @ Ic, Vce 16 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage 450V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 450V
Emitter Base Voltage (VEBO) 9V
Continuous Collector Current 1.3A
Turn On Time-Max (ton) 3700ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.272040 $0.27204
10 $0.256642 $2.56642
100 $0.242115 $24.2115
500 $0.228410 $114.205
1000 $0.215481 $215.481
DXT13003DG-13 Product Details

DXT13003DG-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 500mA 2V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A 1.3A continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 4MHz.The breakdown input voltage is 450V volts.When collector current reaches its maximum, it can reach 1.3A volts.

DXT13003DG-13 Features


the DC current gain for this device is 16 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

DXT13003DG-13 Applications


There are a lot of Diodes Incorporated DXT13003DG-13 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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