BC847CT-7-F Overview

In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 100mA in order to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.There is a transition frequency of 100MHz in the part.There is a breakdown input voltage of 45V volts that it can take.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC847CT-7-F Features

the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847CT-7-F Applications

There are a lot of Diodes Incorporated BC847CT-7-F applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver