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ZTX789A

ZTX789A

ZTX789A

Diodes Incorporated

ZTX789A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX789A Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation1W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating-3A
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX789A
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 3A
Collector Emitter Breakdown Voltage25V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage-500mV
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -3A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6276 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.912772$2.912772
10$2.747898$27.47898
100$2.592356$259.2356
500$2.445620$1222.81
1000$2.307188$2307.188

ZTX789A Product Details

ZTX789A Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 3A.A -3A continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 3A volts is possible.

ZTX789A Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz

ZTX789A Applications


There are a lot of Diodes Incorporated ZTX789A applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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