2N4125TFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N4125TFR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 2mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
200mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.05000
$0.05
500
$0.0495
$24.75
1000
$0.049
$49
1500
$0.0485
$72.75
2000
$0.048
$96
2500
$0.0475
$118.75
2N4125TFR Product Details
2N4125TFR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 2mA 1V DC current gain.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
2N4125TFR Features
the DC current gain for this device is 50 @ 2mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA
2N4125TFR Applications
There are a lot of Rochester Electronics, LLC 2N4125TFR applications of single BJT transistors.