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BC848CW-7-F

BC848CW-7-F

BC848CW-7-F

Diodes Incorporated

BC848CW-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC848CW-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BC848CW-7-F Product Details

BC848CW-7-F Overview


This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.In the part, the transition frequency is 300MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC848CW-7-F Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz

BC848CW-7-F Applications


There are a lot of Diodes Incorporated BC848CW-7-F applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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