BC856BW-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC856BW-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Supplier Device Package
SOT-323
Weight
6.010099mg
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
-65V
Max Power Dissipation
200mW
Current Rating
-100mA
Frequency
200MHz
Base Part Number
BC856BW
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
200mW
Power - Max
200mW
Gain Bandwidth Product
200MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Max Frequency
200MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
65V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC856BW-7-F Product Details
BC856BW-7-F Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.Input voltage breakdown is available at 65V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 65V maximal voltage - Collector EmSingle BJT transistorter Breakdown.The maximum collector current is 100mA volts.
BC856BW-7-F Features
the DC current gain for this device is 220 @ 2mA 5V a collector emitter saturation voltage of -650mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA the supplier device package of SOT-323
BC856BW-7-F Applications
There are a lot of Diodes Incorporated BC856BW-7-F applications of single BJT transistors.