PBHV9215Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBHV9215Z,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.45W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
35MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PBHV9215
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.45W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
35MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
350mV @ 400mA, 2A
Collector Emitter Breakdown Voltage
150V
Transition Frequency
35MHz
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
-6V
hFE Min
60
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBHV9215Z,115 Product Details
PBHV9215Z,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1A 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 400mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As you can see, the part has a transition frequency of 35MHz.Single BJT transistor can be broken down at a voltage of 150V volts.During maximum operation, collector current can be as low as 2A volts.
PBHV9215Z,115 Features
the DC current gain for this device is 80 @ 1A 10V the vce saturation(Max) is 350mV @ 400mA, 2A the emitter base voltage is kept at -6V a transition frequency of 35MHz
PBHV9215Z,115 Applications
There are a lot of Nexperia USA Inc. PBHV9215Z,115 applications of single BJT transistors.