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PBHV9215Z,115

PBHV9215Z,115

PBHV9215Z,115

Nexperia USA Inc.

PBHV9215Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV9215Z,115 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 35MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBHV9215
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.45W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 35MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 400mA, 2A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 35MHz
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) -6V
hFE Min 60
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.21450 $0.2145
2,000 $0.19800 $0.396
5,000 $0.18700 $0.935
10,000 $0.18150 $1.815
PBHV9215Z,115 Product Details

PBHV9215Z,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1A 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 400mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As you can see, the part has a transition frequency of 35MHz.Single BJT transistor can be broken down at a voltage of 150V volts.During maximum operation, collector current can be as low as 2A volts.

PBHV9215Z,115 Features


the DC current gain for this device is 80 @ 1A 10V
the vce saturation(Max) is 350mV @ 400mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 35MHz

PBHV9215Z,115 Applications


There are a lot of Nexperia USA Inc. PBHV9215Z,115 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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