BSS64AT116 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 25mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.This device displays a 100V maximum voltage - Collector Emitter Breakdown.
BSS64AT116 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 300mV @ 10mA, 100mA
BSS64AT116 Applications
There are a lot of ROHM Semiconductor BSS64AT116 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
