DJT4031N-13 Overview

DC current gain in this device equals 200 @ 1A 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.As a result, the part has a transition frequency of 105MHz.The breakdown input voltage is 40V volts.Collector current can be as low as 3A volts at its maximum.

DJT4031N-13 Features

the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 105MHz

DJT4031N-13 Applications

There are a lot of Diodes Incorporated DJT4031N-13 applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver