SQ1922EEH-T1_GE3

new-10%

Manufacturer part number:SQ1922EEH-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 20V SC70-6

Case Package:SOT-23

Datasheet:SQ1922EEH-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2018
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Form	GULL WING
Reach Compliance Code	unknown
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	10 ns
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	350m Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	840mA Tc
Gate Charge (Qg) (Max) @ Vgs	1.2nC @ 4.5V
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	840mA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.84A
Drain-source On Resistance-Max	0.6Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	175°C
FET Feature	Standard
Height	1.1mm
RoHS Status	ROHS3 Compliant