FDG6316P      Description

  Rohm N-channel and P-channel MOSFET have the characteristics of low on-resistance and high switching speed. It has a wide lineup from small signal MOSFET to power MOSFET and can be used in a variety of applications.

FDG6316P    Features    

? ?0.7 A, ?12 V

? RDS(ON) = 270 m @ VGS = ?4.5 V

? RDS(ON) = 360 m @ VGS = ?2.5 V

? RDS(ON) = 650 m @ VGS = ?1.8 V

? Low Gate Charge

? High Performance Trench Technology for Extremely Low RDS(ON)

? Compact Industry Standard SC70?6 Surface Mount Package

? These Devices are Pb?Free and are RoHS Compliant

FDG6316P       Applications

? Battery Management

? Load Switch