JANTX2N2219A Overview

In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.TO-39 is the supplier device package for this product.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.

JANTX2N2219A Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39

JANTX2N2219A Applications

There are a lot of Microsemi Corporation JANTX2N2219A applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface