2SA2071T100Q Overview

This device has a DC current gain of 120 @ 100mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.The part has a transition frequency of 180MHz.Input voltage breakdown is available at 60V volts.During maximum operation, collector current can be as low as 3A volts.

2SA2071T100Q Features

the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
a transition frequency of 180MHz

2SA2071T100Q Applications

There are a lot of ROHM Semiconductor 2SA2071T100Q applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver