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2SA2071T100Q

2SA2071T100Q

2SA2071T100Q

ROHM Semiconductor

2SA2071T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SA2071T100Q Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2011
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating-3A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA2071
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product180MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage60V
Max Frequency 10MHz
Transition Frequency 180MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Height 1.4mm
Length 4.7mm
Width 2.7mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8069 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.170400$0.1704
10$0.160755$1.60755
100$0.151655$15.1655
500$0.143071$71.5355
1000$0.134973$134.973

2SA2071T100Q Product Details

2SA2071T100Q Overview


This device has a DC current gain of 120 @ 100mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.The part has a transition frequency of 180MHz.Input voltage breakdown is available at 60V volts.During maximum operation, collector current can be as low as 3A volts.

2SA2071T100Q Features


the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
a transition frequency of 180MHz

2SA2071T100Q Applications


There are a lot of ROHM Semiconductor 2SA2071T100Q applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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