NJVMJD32T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD32T4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.56W
Pin Count
3
Configuration
Single
Power - Max
1.56W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
3MHz
Frequency - Transition
3MHz
Collector Base Voltage (VCBO)
40V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.762000
$0.762
10
$0.718868
$7.18868
100
$0.678177
$67.8177
500
$0.639790
$319.895
1000
$0.603575
$603.575
NJVMJD32T4G Product Details
NJVMJD32T4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.In the part, the transition frequency is 3MHz.When collector current reaches its maximum, it can reach 3A volts.
NJVMJD32T4G Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A a transition frequency of 3MHz
NJVMJD32T4G Applications
There are a lot of ON Semiconductor NJVMJD32T4G applications of single BJT transistors.