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NJVMJD32T4G

NJVMJD32T4G

NJVMJD32T4G

ON Semiconductor

NJVMJD32T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD32T4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1.56W
Pin Count3
Configuration Single
Power - Max 1.56W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.2V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage40V
Transition Frequency 3MHz
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 40V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:36988 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.762000$0.762
10$0.718868$7.18868
100$0.678177$67.8177
500$0.639790$319.895
1000$0.603575$603.575

NJVMJD32T4G Product Details

NJVMJD32T4G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.In the part, the transition frequency is 3MHz.When collector current reaches its maximum, it can reach 3A volts.

NJVMJD32T4G Features


the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz

NJVMJD32T4G Applications


There are a lot of ON Semiconductor NJVMJD32T4G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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