DSS4160T-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 5V.With a collector emitter saturation voltage of 280mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.The part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
DSS4160T-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 280mV
the vce saturation(Max) is 280mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS4160T-7 Applications
There are a lot of Diodes Incorporated DSS4160T-7 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
