KSD1408YTU Overview
This device has a DC current gain of 120 @ 500mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 450mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.As a result, the part has a transition frequency of 8MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
KSD1408YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD1408YTU Applications
There are a lot of ON Semiconductor KSD1408YTU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
