SBC846BLT3G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.The part has a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.A maximum collector current of 100mA volts is possible.

SBC846BLT3G Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

SBC846BLT3G Applications

There are a lot of ON Semiconductor SBC846BLT3G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver