MMBT4403M3T5G Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The maximum collector current is 600mA volts.
MMBT4403M3T5G Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
MMBT4403M3T5G Applications
There are a lot of ON Semiconductor MMBT4403M3T5G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
