ZTX1149ASTZ Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 500mA 2V.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 70mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -3A to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Collector current can be as low as 3A volts at its maximum.

ZTX1149ASTZ Features

the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 70mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A

ZTX1149ASTZ Applications

There are a lot of Diodes Incorporated ZTX1149ASTZ applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface