DSS5540X-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS5540X-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
900mW
Transistor Application
SWITCHING
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
375mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
375mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
60MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-6V
Continuous Collector Current
-4A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.317760
$0.31776
10
$0.299774
$2.99774
100
$0.282805
$28.2805
500
$0.266797
$133.3985
1000
$0.251696
$251.696
DSS5540X-13 Product Details
DSS5540X-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.A transition frequency of 60MHz is present in the part.Input voltage breakdown is available at 40V volts.In extreme cases, the collector current can be as low as 4A volts.
DSS5540X-13 Features
the DC current gain for this device is 150 @ 2A 2V the vce saturation(Max) is 375mV @ 500mA, 5A the emitter base voltage is kept at -6V a transition frequency of 60MHz
DSS5540X-13 Applications
There are a lot of Diodes Incorporated DSS5540X-13 applications of single BJT transistors.