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DSS5540X-13

DSS5540X-13

DSS5540X-13

Diodes Incorporated

DSS5540X-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS5540X-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation900mW
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 900mW
Transistor Application SWITCHING
Gain Bandwidth Product60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 375mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 375mV @ 500mA, 5A
Collector Emitter Breakdown Voltage40V
Transition Frequency 60MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -4A
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:14175 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.317760$0.31776
10$0.299774$2.99774
100$0.282805$28.2805
500$0.266797$133.3985
1000$0.251696$251.696

DSS5540X-13 Product Details

DSS5540X-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.A transition frequency of 60MHz is present in the part.Input voltage breakdown is available at 40V volts.In extreme cases, the collector current can be as low as 4A volts.

DSS5540X-13 Features


the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 375mV @ 500mA, 5A
the emitter base voltage is kept at -6V
a transition frequency of 60MHz

DSS5540X-13 Applications


There are a lot of Diodes Incorporated DSS5540X-13 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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