MMBT3906LP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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MMBT3906LP-7B Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-UFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Series
Automotive, AEC-Q101
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
250mW
Terminal Position
BOTTOM
Base Part Number
MMBT3906
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
250mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Max Breakdown Voltage
40V
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Continuous Collector Current
-200mA
VCEsat-Max
0.4 V
Turn On Time-Max (ton)
70ns
Collector-Base Capacitance-Max
4.5pF
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.058915
$0.058915
500
$0.043320
$21.66
1000
$0.036101
$36.101
2000
$0.033119
$66.238
5000
$0.030952
$154.76
10000
$0.028793
$287.93
15000
$0.027847
$417.705
50000
$0.027381
$1369.05
MMBT3906LP-7B Product Details
MMBT3906LP-7B Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.300MHz is present in the transition frequency.As a result, it can handle voltages as low as 40V volts.A maximum collector current of 200mA volts can be achieved.
MMBT3906LP-7B Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at -5V a transition frequency of 300MHz
MMBT3906LP-7B Applications
There are a lot of Diodes Incorporated MMBT3906LP-7B applications of single BJT transistors.