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DXT751-13

DXT751-13

DXT751-13

Diodes Incorporated

DXT751-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT751-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product145MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage60V
Current - Collector (Ic) (Max) 3A
Transition Frequency 145MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:34334 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.090560$0.09056
500$0.066588$33.294
1000$0.055490$55.49
2000$0.050908$101.816
5000$0.047578$237.89
10000$0.044259$442.59
15000$0.042803$642.045
50000$0.042088$2104.4

DXT751-13 Product Details

DXT751-13 Overview


In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 300mA, 3A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 145MHz.Maximum collector currents can be below 3A volts.

DXT751-13 Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 145MHz

DXT751-13 Applications


There are a lot of Diodes Incorporated DXT751-13 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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