DXT751-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT751-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
145MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
3A
Transition Frequency
145MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.090560
$0.09056
500
$0.066588
$33.294
1000
$0.055490
$55.49
2000
$0.050908
$101.816
5000
$0.047578
$237.89
10000
$0.044259
$442.59
15000
$0.042803
$642.045
50000
$0.042088
$2104.4
DXT751-13 Product Details
DXT751-13 Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 300mA, 3A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 145MHz.Maximum collector currents can be below 3A volts.
DXT751-13 Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 600mV @ 300mA, 3A the emitter base voltage is kept at 5V a transition frequency of 145MHz
DXT751-13 Applications
There are a lot of Diodes Incorporated DXT751-13 applications of single BJT transistors.