BCP53-10TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCP53-10TF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
4
Power - Max
1.8W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.091760
$0.09176
500
$0.067471
$33.7355
1000
$0.056225
$56.225
2000
$0.051583
$103.166
5000
$0.048208
$241.04
10000
$0.044845
$448.45
15000
$0.043370
$650.55
50000
$0.042645
$2132.25
BCP53-10TF Product Details
BCP53-10TF Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
BCP53-10TF Features
the DC current gain for this device is 63 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP53-10TF Applications
There are a lot of Nexperia USA Inc. BCP53-10TF applications of single BJT transistors.