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MMST4401T146

MMST4401T146

MMST4401T146

ROHM Semiconductor

MMST4401T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

MMST4401T146 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating600mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number T4401
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power - Max 200mW
Transistor Application SWITCHING
Gain Bandwidth Product250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage1.2V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 20
Continuous Collector Current 600mA
Turn Off Time-Max (toff) 255ns
Collector-Base Capacitance-Max 7pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15781 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.041390$2.04139
10$1.925840$19.2584
100$1.816830$181.683
500$1.713991$856.9955
1000$1.616972$1616.972

MMST4401T146 Product Details

MMST4401T146 Overview


This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 600mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 250MHz is present in the part.This device can take an input voltage of 40V volts before it breaks down.When collector current reaches its maximum, it can reach 600mA volts.

MMST4401T146 Features


the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz

MMST4401T146 Applications


There are a lot of ROHM Semiconductor MMST4401T146 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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