DXT13003EK-13 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 300mA 2V.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 250mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1.5A in order to achieve high efficiency.An emitter's base voltage can be kept at 9V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.As a result, it can handle voltages as low as 460V volts.During maximum operation, collector current can be as low as 1.5A volts.

DXT13003EK-13 Features

the DC current gain for this device is 15 @ 300mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

DXT13003EK-13 Applications

There are a lot of Diodes Incorporated DXT13003EK-13 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter