2SA1707T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2SA1707T-AN Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
SC-71
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation
1W
Pin Count
3
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-700mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.354889
$0.354889
10
$0.334801
$3.34801
100
$0.315850
$31.585
500
$0.297972
$148.986
1000
$0.281105
$281.105
2SA1707T-AN Product Details
2SA1707T-AN Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.A VCE saturation (Max) of 700mV @ 100mA, 2A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 3A volts at its maximum.
2SA1707T-AN Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 700mV @ 100mA, 2A the emitter base voltage is kept at 6V
2SA1707T-AN Applications
There are a lot of ON Semiconductor 2SA1707T-AN applications of single BJT transistors.