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2SA1707T-AN

2SA1707T-AN

2SA1707T-AN

ON Semiconductor

2SA1707T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1707T-AN Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case SC-71
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation 1W
Pin Count 3
Power - Max 1W
Transistor Type PNP
Collector Emitter Voltage (VCEO) -700mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.354889 $0.354889
10 $0.334801 $3.34801
100 $0.315850 $31.585
500 $0.297972 $148.986
1000 $0.281105 $281.105
2SA1707T-AN Product Details

2SA1707T-AN Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.A VCE saturation (Max) of 700mV @ 100mA, 2A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 3A volts at its maximum.

2SA1707T-AN Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SA1707T-AN Applications


There are a lot of ON Semiconductor 2SA1707T-AN applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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