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2SD1484KT146Q

2SD1484KT146Q

2SD1484KT146Q

ROHM Semiconductor

2SD1484KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD1484KT146Q Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 59
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 300mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD1484
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 3V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Continuous Collector Current 500mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.067680 $0.06768
500 $0.049765 $24.8825
1000 $0.041471 $41.471
2000 $0.038046 $76.092
5000 $0.035557 $177.785
10000 $0.033077 $330.77
15000 $0.031989 $479.835
50000 $0.031454 $1572.7
2SD1484KT146Q Product Details

2SD1484KT146Q Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 10mA 3V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 300mA.A transition frequency of 250MHz is present in the part.Single BJT transistor can be broken down at a voltage of 50V volts.Collector current can be as low as 500mA volts at its maximum.

2SD1484KT146Q Features


the DC current gain for this device is 120 @ 10mA 3V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 250MHz

2SD1484KT146Q Applications


There are a lot of ROHM Semiconductor 2SD1484KT146Q applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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