2SD1484KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD1484KT146Q Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
59
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
300mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD1484
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 10mA 3V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
250MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
120
Continuous Collector Current
500mA
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.067680
$0.06768
500
$0.049765
$24.8825
1000
$0.041471
$41.471
2000
$0.038046
$76.092
5000
$0.035557
$177.785
10000
$0.033077
$330.77
15000
$0.031989
$479.835
50000
$0.031454
$1572.7
2SD1484KT146Q Product Details
2SD1484KT146Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 10mA 3V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 300mA.A transition frequency of 250MHz is present in the part.Single BJT transistor can be broken down at a voltage of 50V volts.Collector current can be as low as 500mA volts at its maximum.
2SD1484KT146Q Features
the DC current gain for this device is 120 @ 10mA 3V the vce saturation(Max) is 400mV @ 15mA, 150mA the emitter base voltage is kept at 5V the current rating of this device is 300mA a transition frequency of 250MHz
2SD1484KT146Q Applications
There are a lot of ROHM Semiconductor 2SD1484KT146Q applications of single BJT transistors.