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NSS60200LT1G

NSS60200LT1G

NSS60200LT1G

ON Semiconductor

NSS60200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSS60200LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 540mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NSS60200
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 540mW
Power - Max 460mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -30mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
hFE Min 150
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.14878 $0.44634
6,000 $0.14019 $0.84114
15,000 $0.13160 $1.974
30,000 $0.12129 $3.6387
75,000 $0.11699 $8.77425
NSS60200LT1G Product Details

NSS60200LT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -30mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 200mA, 2A.Emitter base voltages of 7V can achieve high levels of efficiency.100MHz is present in the transition frequency.This device can take an input voltage of 60V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

NSS60200LT1G Features


the DC current gain for this device is 150 @ 500mA 2V
a collector emitter saturation voltage of -30mV
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

NSS60200LT1G Applications


There are a lot of ON Semiconductor NSS60200LT1G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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