NSS60200LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -30mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 200mA, 2A.Emitter base voltages of 7V can achieve high levels of efficiency.100MHz is present in the transition frequency.This device can take an input voltage of 60V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
NSS60200LT1G Features
the DC current gain for this device is 150 @ 500mA 2V
a collector emitter saturation voltage of -30mV
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS60200LT1G Applications
There are a lot of ON Semiconductor NSS60200LT1G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
