FCX458TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FCX458TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
400V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
225mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FCX458
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
225mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
225mA
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.369000
$0.369
10
$0.348113
$3.48113
100
$0.328409
$32.8409
500
$0.309820
$154.91
1000
$0.292283
$292.283
FCX458TA Product Details
FCX458TA Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 6mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of 225mA should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 225mA.As a result, the part has a transition frequency of 50MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 225mA volts at Single BJT transistors maximum.
FCX458TA Features
the DC current gain for this device is 100 @ 50mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 6mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 225mA a transition frequency of 50MHz
FCX458TA Applications
There are a lot of Diodes Incorporated FCX458TA applications of single BJT transistors.