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MMBT3906-7-F

MMBT3906-7-F

MMBT3906-7-F

Diodes Incorporated

MMBT3906-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBT3906-7-F Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT3906
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -400mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Continuous Collector Current -200mA
Turn On Time-Max (ton) 70ns
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.02302 $0.06906
6,000 $0.02092 $0.12552
15,000 $0.01840 $0.276
30,000 $0.01672 $0.5016
75,000 $0.01504 $1.128
150,000 $0.01280 $1.92
MMBT3906-7-F Product Details

MMBT3906-7-F Overview


MMBT3906-7-F is a type of bipolar transistor. The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.250MHz is present in the transition frequency.There is a breakdown  input voltage of 40V volts that it can take.A maximum collector current of 200mA volts can be achieved.

MMBT3906-7-F Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -200mA
a transition frequency of 250MHz

MMBT3906-7-F Applications


There are a lot of Diodes Incorporated MMBT3906-7-F applications of single BJT transistors.

  • Interface

  • Muting

  • Inverter

  • Driver

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