2SC3646T-TD-E Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 400mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As a result, the part has a transition frequency of 120MHz.This device can take an input voltage of 100V volts before it breaks down.Maximum collector currents can be below 1A volts.
2SC3646T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3646T-TD-E Applications
There are a lot of ON Semiconductor 2SC3646T-TD-E applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
