2SC3646T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC3646T-TD-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
500mW
Terminal Form
FLAT
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
120MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Collector Emitter Breakdown Voltage
100V
Max Frequency
1MHz
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
100mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6V
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.612981
$1.612981
10
$1.521680
$15.2168
100
$1.435547
$143.5547
500
$1.354290
$677.145
1000
$1.277632
$1277.632
2SC3646T-TD-E Product Details
2SC3646T-TD-E Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 400mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As a result, the part has a transition frequency of 120MHz.This device can take an input voltage of 100V volts before it breaks down.Maximum collector currents can be below 1A volts.
2SC3646T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V a collector emitter saturation voltage of 100mV the vce saturation(Max) is 400mV @ 40mA, 400mA the emitter base voltage is kept at 6V a transition frequency of 120MHz
2SC3646T-TD-E Applications
There are a lot of ON Semiconductor 2SC3646T-TD-E applications of single BJT transistors.