TN6705A

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Manufacturer part number:TN6705A

Manufacturer:ON Semiconductor

Description:TN6705A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:TN6705A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Reach Compliance Code	compliant
Power - Max	1W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 250mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	1.5A

Quantity	Unit Price	Ext. Price
1	$0.12000	$0.12
500	$0.1188	$59.4
1000	$0.1176	$117.6
1500	$0.1164	$174.6
2000	$0.1152	$230.4
2500	$0.114	$285

TN6705A Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 250mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100mA, 1A.Device displays Collector Emitter Breakdown (45V maximal voltage).