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TN6705A

TN6705A

TN6705A

ON Semiconductor

TN6705A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TN6705A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 250mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1.5A
In-Stock:69634 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.12000$0.12
500$0.1188$59.4
1000$0.1176$117.6
1500$0.1164$174.6
2000$0.1152$230.4
2500$0.114$285

TN6705A Product Details

TN6705A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 250mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100mA, 1A.Device displays Collector Emitter Breakdown (45V maximal voltage).

TN6705A Features


the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 100mA, 1A

TN6705A Applications


There are a lot of ON Semiconductor TN6705A applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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