BC556BTFR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.An input voltage of 65V volts is the breakdown voltage.The maximum collector current is 100mA volts.
BC556BTFR Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556BTFR Applications
There are a lot of ON Semiconductor BC556BTFR applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
