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BCW60B,215

  • BCW60B,215
  • BCW60B,215

BCW60B,215

BCW60B,215

Nexperia USA Inc.

BCW60B,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW60B,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BCW60
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Forward Current 100mA
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Forward Voltage 550mV
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 100mA
Max Repetitive Reverse Voltage (Vrrm) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage 32V
Transition Frequency 250MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
Max Forward Surge Current (Ifsm) 1A
hFE Min 20
Turn Off Time-Max (toff) 800ns
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.301294 $0.301294
10 $0.284240 $2.8424
100 $0.268151 $26.8151
500 $0.252973 $126.4865
1000 $0.238653 $238.653
BCW60B,215 Product Details

BCW60B,215 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 2mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 250MHz.The breakdown input voltage is 32V volts.A maximum collector current of 100mA volts can be achieved.

BCW60B,215 Features


the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

BCW60B,215 Applications


There are a lot of Nexperia USA Inc. BCW60B,215 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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