MMBTA63-7-F Overview

This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 500mA volts can be achieved.

MMBTA63-7-F Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz

MMBTA63-7-F Applications

There are a lot of Diodes Incorporated MMBTA63-7-F applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter