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ZTX457

ZTX457

ZTX457

Diodes Incorporated

ZTX457 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX457 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX457
Pin Count 3
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 75MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 300V
Max Frequency 20MHz
Transition Frequency 75MHz
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.739937 $0.739937
10 $0.698054 $6.98054
100 $0.658541 $65.8541
500 $0.621266 $310.633
1000 $0.586100 $586.1
ZTX457 Product Details

ZTX457 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 50mA 10V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 75MHz.Maximum collector currents can be below 500mA volts.

ZTX457 Features


the DC current gain for this device is 50 @ 50mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 75MHz

ZTX457 Applications


There are a lot of Diodes Incorporated ZTX457 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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