ZTX457 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX457 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
E-Line
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Voltage - Rated DC
300V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX457
Pin Count
3
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
75MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
300V
Max Frequency
20MHz
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
300mV
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.739937
$0.739937
10
$0.698054
$6.98054
100
$0.658541
$65.8541
500
$0.621266
$310.633
1000
$0.586100
$586.1
ZTX457 Product Details
ZTX457 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 50mA 10V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 75MHz.Maximum collector currents can be below 500mA volts.
ZTX457 Features
the DC current gain for this device is 50 @ 50mA 10V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 75MHz
ZTX457 Applications
There are a lot of Diodes Incorporated ZTX457 applications of single BJT transistors.