FMMT493ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT493ATA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT493A
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 250mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
7V
hFE Min
20
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
1A
Height
1.12mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.037110
$0.03711
500
$0.027287
$13.6435
1000
$0.022739
$22.739
2000
$0.020862
$41.724
5000
$0.019497
$97.485
10000
$0.018137
$181.37
15000
$0.017540
$263.1
50000
$0.017247
$862.35
FMMT493ATA Product Details
FMMT493ATA Overview
This device has a DC current gain of 300 @ 250mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.In the part, the transition frequency is 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
FMMT493ATA Features
the DC current gain for this device is 300 @ 250mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 7V the current rating of this device is 1A a transition frequency of 150MHz
FMMT493ATA Applications
There are a lot of Diodes Incorporated FMMT493ATA applications of single BJT transistors.