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FMMT493ATA

FMMT493ATA

FMMT493ATA

Diodes Incorporated

FMMT493ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT493ATA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT493A
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 1A
Height 1.12mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.037110 $0.03711
500 $0.027287 $13.6435
1000 $0.022739 $22.739
2000 $0.020862 $41.724
5000 $0.019497 $97.485
10000 $0.018137 $181.37
15000 $0.017540 $263.1
50000 $0.017247 $862.35
FMMT493ATA Product Details

FMMT493ATA Overview


This device has a DC current gain of 300 @ 250mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.In the part, the transition frequency is 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.

FMMT493ATA Features


the DC current gain for this device is 300 @ 250mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 1A
a transition frequency of 150MHz

FMMT493ATA Applications


There are a lot of Diodes Incorporated FMMT493ATA applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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