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2SB1201S-TL-E

2SB1201S-TL-E

2SB1201S-TL-E

ON Semiconductor

2SB1201S-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1201S-TL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 800mW
Base Part Number 2SB1201
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 150MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Max Frequency 150MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
Height 2.3mm
Length 6.5mm
Width 5.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.998520 $0.99852
10 $0.942000 $9.42
100 $0.888679 $88.8679
500 $0.838377 $419.1885
1000 $0.790921 $790.921
2SB1201S-TL-E Product Details

2SB1201S-TL-E Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 700mV @ 50mA, 1A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at -6V to gain high efficiency.Single BJT transistor can take a breakdown input voltage of 50V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SB1201S-TL-E Features


the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at -6V

2SB1201S-TL-E Applications


There are a lot of ON Semiconductor 2SB1201S-TL-E applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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