2SB1201S-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 700mV @ 50mA, 1A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at -6V to gain high efficiency.Single BJT transistor can take a breakdown input voltage of 50V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SB1201S-TL-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at -6V
2SB1201S-TL-E Applications
There are a lot of ON Semiconductor 2SB1201S-TL-E applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
