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MMBT6515

MMBT6515

MMBT6515

Rochester Electronics, LLC

MMBT6515 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MMBT6515 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 350mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 200mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.03000 $0.03
500 $0.0297 $14.85
1000 $0.0294 $29.4
1500 $0.0291 $43.65
2000 $0.0288 $57.6
2500 $0.0285 $71.25
MMBT6515 Product Details

MMBT6515 Overview


This device has a DC current gain of 250 @ 2mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Device displays Collector Emitter Breakdown (25V maximal voltage).

MMBT6515 Features


the DC current gain for this device is 250 @ 2mA 10V
the vce saturation(Max) is 500mV @ 5mA, 50mA

MMBT6515 Applications


There are a lot of Rochester Electronics, LLC MMBT6515 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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