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MMBT6515

MMBT6515

MMBT6515

Rochester Electronics, LLC

MMBT6515 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MMBT6515 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 350mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 200mA
RoHS StatusROHS3 Compliant
In-Stock:268306 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.03000$0.03
500$0.0297$14.85
1000$0.0294$29.4
1500$0.0291$43.65
2000$0.0288$57.6
2500$0.0285$71.25

MMBT6515 Product Details

MMBT6515 Overview


This device has a DC current gain of 250 @ 2mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Device displays Collector Emitter Breakdown (25V maximal voltage).

MMBT6515 Features


the DC current gain for this device is 250 @ 2mA 10V
the vce saturation(Max) is 500mV @ 5mA, 50mA

MMBT6515 Applications


There are a lot of Rochester Electronics, LLC MMBT6515 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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