MMBT6515 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MMBT6515 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
200mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.03000
$0.03
500
$0.0297
$14.85
1000
$0.0294
$29.4
1500
$0.0291
$43.65
2000
$0.0288
$57.6
2500
$0.0285
$71.25
MMBT6515 Product Details
MMBT6515 Overview
This device has a DC current gain of 250 @ 2mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Device displays Collector Emitter Breakdown (25V maximal voltage).
MMBT6515 Features
the DC current gain for this device is 250 @ 2mA 10V the vce saturation(Max) is 500mV @ 5mA, 50mA
MMBT6515 Applications
There are a lot of Rochester Electronics, LLC MMBT6515 applications of single BJT transistors.