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PBHV9050Z,115

PBHV9050Z,115

PBHV9050Z,115

Nexperia USA Inc.

PBHV9050Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV9050Z,115 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Tolerance 5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination Axial
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 700mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 50MHz
Base Part Number PBHV9050
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Power - Max 700mW
Transistor Application SWITCHING
Test Current 5mA
Gain Bandwidth Product 550MHz
Polarity/Channel Type PNP
Zener Voltage 9.1V
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 250mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 20mA, 100mA
Collector Emitter Breakdown Voltage 500V
Transition Frequency 50MHz
Max Breakdown Voltage 500V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) -6V
hFE Min 100
Outside Diameter 2 mm
Zener Current 5mA
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.738112 $0.738112
10 $0.696332 $6.96332
100 $0.656917 $65.6917
500 $0.619733 $309.8665
1000 $0.584654 $584.654
PBHV9050Z,115 Product Details

PBHV9050Z,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 50mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 20mA, 100mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.There is a transition frequency of 50MHz in the part.An input voltage of 500V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 250mA volts at Single BJT transistors maximum.

PBHV9050Z,115 Features


the DC current gain for this device is 80 @ 50mA 10V
the vce saturation(Max) is 350mV @ 20mA, 100mA
the emitter base voltage is kept at -6V
a transition frequency of 50MHz

PBHV9050Z,115 Applications


There are a lot of Nexperia USA Inc. PBHV9050Z,115 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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