PBHV9050Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBHV9050Z,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Tolerance
5%
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
Axial
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
700mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
50MHz
Base Part Number
PBHV9050
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Power - Max
700mW
Transistor Application
SWITCHING
Test Current
5mA
Gain Bandwidth Product
550MHz
Polarity/Channel Type
PNP
Zener Voltage
9.1V
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
250mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
350mV @ 20mA, 100mA
Collector Emitter Breakdown Voltage
500V
Transition Frequency
50MHz
Max Breakdown Voltage
500V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
-6V
hFE Min
100
Outside Diameter
2 mm
Zener Current
5mA
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.738112
$0.738112
10
$0.696332
$6.96332
100
$0.656917
$65.6917
500
$0.619733
$309.8665
1000
$0.584654
$584.654
PBHV9050Z,115 Product Details
PBHV9050Z,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 50mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 20mA, 100mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.There is a transition frequency of 50MHz in the part.An input voltage of 500V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 250mA volts at Single BJT transistors maximum.
PBHV9050Z,115 Features
the DC current gain for this device is 80 @ 50mA 10V the vce saturation(Max) is 350mV @ 20mA, 100mA the emitter base voltage is kept at -6V a transition frequency of 50MHz
PBHV9050Z,115 Applications
There are a lot of Nexperia USA Inc. PBHV9050Z,115 applications of single BJT transistors.