NSS1C200LT1G Overview
This device has a DC current gain of 120 @ 50mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -40mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.120MHz is present in the transition frequency.Breakdown input voltage is 100V volts.Maximum collector currents can be below 2A volts.
NSS1C200LT1G Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -40mV
the vce saturation(Max) is 250mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
NSS1C200LT1G Applications
There are a lot of ON Semiconductor NSS1C200LT1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
