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NSS1C200LT1G

NSS1C200LT1G

NSS1C200LT1G

ON Semiconductor

NSS1C200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSS1C200LT1G Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 710mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 120MHz
Base Part Number NSS1C200
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 710mW
Power - Max 490mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -40mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 7V
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.578520 $0.57852
10 $0.545774 $5.45774
100 $0.514881 $51.4881
500 $0.485737 $242.8685
1000 $0.458242 $458.242
NSS1C200LT1G Product Details

NSS1C200LT1G Overview


This device has a DC current gain of 120 @ 50mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -40mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.120MHz is present in the transition frequency.Breakdown input voltage is 100V volts.Maximum collector currents can be below 2A volts.

NSS1C200LT1G Features


the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -40mV
the vce saturation(Max) is 250mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz

NSS1C200LT1G Applications


There are a lot of ON Semiconductor NSS1C200LT1G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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