DXT5551-13 Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The part has a transition frequency of 100MHz.There is a breakdown input voltage of 160V volts that it can take.When collector current reaches its maximum, it can reach 600mA volts.
DXT5551-13 Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
DXT5551-13 Applications
There are a lot of Diodes Incorporated DXT5551-13 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
